| 摘要 |
PROBLEM TO BE SOLVED: To provide a film deposition method which enables a thin film of a low resistance to be deposited by using the ALD method.SOLUTION: The step, at which a substrate is sequentially supplied thereon in a chamber with a first process gas and a second process gas which react each other, and at which the first process gas and the second process gas are once fed onto the substrate, is one cycle. A film deposition method has a film deposition step, at which the film deposition is performed by depositing an atomic layer or a molecular layer of reaction products of the plural gases is deposited on the substrate by repeating the one cycle. The film deposition step is performed by setting the time period of the one cycle within 0.5 seconds. |
