| 摘要 |
PROBLEM TO BE SOLVED: To provide a reference voltage generation circuit and a reference voltage generation method in which manufacturing variation in reference voltage arising from a difference in the characteristic of each individual circuit element is eliminated.SOLUTION: A nonvolatile storage element is arranged in which two nonvolatile storage elements are with a tunnel oxide film and a nonvolatile storage element without a tunnel oxide film are arranged on each of a depletion side M1 and an enhancement side M2, their control gates and floating gates being connected. A threshold Vth is adjusted by an M1w and an M2w, respectively. Since the M1w and an M1r have their control gates and floating gates connected, they have the same threshold value Vth. It is the M1r and an M2r that generates a reference voltage, and SW is not included in a current path. Furthermore, since the M1r and the M2r, to which a power supply voltage is applied, do not have the tunnel oxide film, there is no fluctuation in the threshold Vth caused by disturbance. |
