| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a production method of a semiconductor device by which highly reliable thin film is deposited in short time, and a substrate processing device.SOLUTION: In the production method of a semiconductor device and a substrate processing device 10, raw material gas is supplied from a raw material supply system 52 into a reactive gas chamber 30, and reactive gas is supplied from a reactive gas supply system 54. Thereby, a wafer 100 is deposited as a processed substrate fed into the reactive chamber 30. In the reactive gas supply system 54, after deposition, corrosion suppression gas for suppressing corrosion of the reactive gas supply system 54 is fed from a corrosion suppression gas supply system 54 for suppressing corrosion of a corrosion suppression gas feeding system 58. Before deposition, the corrosion suppression gas fed into the reactive gas supply system 54 is exhausted by a corrosion suppression gas exhaust system 64.</p> |
