| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing generation of field inversion and achieving more stable element isolation, and to provide a semiconductor device capable of effectively utilizing a semiconductor chip area and increasing shrinkage.SOLUTION: A semiconductor device 1 includes: an epitaxial substrate 45; an element isolation well 7 formed on a surface layer part of the epitaxial substrate 45, and dividing a low-voltage element region 2; a field insulating film 10 covering a surface of the element isolation well 7; first to fourth interlayer insulating films 21, 25, 27, and 36 formed on the epitaxial substrate 45; high-voltage wiring 30 formed on the fourth interlayer insulating film 36; and a conductor film 11 interposed between the high-voltage wiring 30 and the field insulating film 10, and fixed at a certain potential. |
