| 摘要 |
PURPOSE:To bring out a maximum mutual diffusion prevention effect of a barrier metal layer inserted between source/drain electrodes and a wiring layer without incurring restriction on a manufacturing process. CONSTITUTION:The title device is provided with an Si oxide film 4 having flat surface wherein metallic films 7a, 7b are buried inside contact holes 4a, 4b positioned on source/drain electrodes 3a, 3b and barrier metal layers 8a, 8b which are formed to cover a surface of the metallic films 7a, 7b and a boundary part between the metallic films and the Si oxide film 4. Source/drain wiring layers 9a, 9b are arranged on the barrier metal layer. |
