发明名称 HEAT DISSIPATION SUBSTRATE AND METHOD FOR PRODUCING SAME
摘要 The present invention relates to a heat dissipation substrate, which is a composite substrate composed of two layers, and which is characterized in that a surface layer (first layer) (1) is configured of single crystal silicon and a handle substrate (second layer) (2) is configured of a material that has a higher thermal conductivity than the first layer. A heat dissipation substrate of the present invention has high heat dissipation properties.
申请公布号 KR20150006837(A) 申请公布日期 2015.01.19
申请号 KR20147030514 申请日期 2013.05.07
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 AKIYAMA SHOJI;KUBOTA YOSHIHIRO;KAWAI MAKOTO
分类号 H01L23/373;H01L27/12 主分类号 H01L23/373
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