| 摘要 |
<p>The present invention relates to a method for manufacturing a CIGS optical absorption layer using indium oxide and a method for manufacturing a CIGS thin film solar cell using the same. More specifically, the method for manufacturing a CIGS optical absorption layer includes the steps of: depositing a copper (Cu) precursor, an indium (In) precursor, and a gallium (Ga) precursor through a sputtering process; and heat treating in a selenium (Se) atmosphere. In the step of depositing the indium (In) precursor, an indium (In) layer is formed by an indium oxide (In_2O_3) thin film targeting indium oxide (In_2O_3), and then by reducing the deposited indium oxide (In_2O_3) thin film to remove oxide, thereby smoothing the surface of the indium (In) precursor, improving the surface type of a CIGS optical absorption layer after the heat-treatment in the selenium (Se) atmosphere, and easily bonding the CIGS optical absorption layer and a buffer layer.</p> |
