| 摘要 |
PROBLEM TO BE SOLVED: To provide a photoelectric conversion device having a suitable transfer path.SOLUTION: A photoelectric conversion device comprises an active region on which a first semiconductor region of a first conductivity type constituting a first photoelectric conversion element; a second semiconductor region of the first conductivity type constituting a second photoelectric conversion element; a third semiconductor region of the first conductivity type; a fourth semiconductor region of the first conductivity type; a first gate electrode constituting a first transfer transistor; and a second gate electrode constituting a second transfer transistor are provided. In the photoelectric conversion device, in planar view to a surface of a semiconductor substrate, a length of sides of the first semiconductor region of the gate electrode is shorter than that of the active region and a length of sides of the first semiconductor region of the first gate electrode is longer that of the first semiconductor region at a position of the side of the first semiconductor region of the first gate electrode. |
