REPRISE DE CONTACT SUR SUBSTRAT SEMI-CONDUCTEUR HETEROGENE

摘要

#CMT# #/CMT# The method involves forming a thin semiconductor layer in contact with two semiconductor materials on a support . The thickness and material of the layer are chosen such that the thin semiconductor layer has a nucleation barrier lower than the nucleation barrier of the semiconductor zones of the semiconductor materials. A metal layer is deposited on the thin semiconductor layer. Annealing is performed for a given duration and at a given temperature to form first region (134) on the first semiconductor zone and a second region (138) on the second semiconductor zone. #CMT#USE : #/CMT# Method for producing semiconductor device e.g. microelectronic device such as optoelectronic device from different semiconductor materials. #CMT#ADVANTAGE : #/CMT# Since the thin semiconductor layer has a nucleation barrier lower than the nucleation barrier of the semiconductor zones of the semiconductor materials, the formation of zones of alloys or compounds of semiconductor and metal having different compositions can thus be facilitated, and the thermal budget required to form these alloys or compounds can be reduced. The given duration of annealing, the given temperature of annealing, and the thickness of the metal layer, can all be provided such that the given semiconductor material of the thin semiconductor layer is completely consumed. The presence of thin semiconductor layer made of germanium enables the thermal budget for simultaneous production of zones of alloy of semiconductor and metal to be reduced. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# The drawing shows a sectional view illustrating method for producing zones of alloy of metal and semiconductor of different compositions from zones of different semiconductor materials positioned on the same support. 134 : Region formed on a first semiconductor zone 138 : Region formed on a second semiconductor zone #CMT#METALLURGY : #/CMT# The semiconductor materials are formed of silicon and germanium. The metal layer is formed of nickel.