| 摘要 |
本发明揭示一种半导体装置，其包含：一基板；一绝缘体层，其提供于该基板上；一第一电晶体，其提供于该绝缘体层上；一半导体层，其包含一第一传导类型之复数个杂质区域，该等杂质区域形成该第一电晶体之一部分；一散热层；一导热层，其连结该半导体层及该散热层；及一中断结构，其经组态以中断该第一电晶体与该导热层之间之一电流之一流动。; an insulator layer provided on the substrate; a first transistor provided on the insulator layer; a semiconductor layer including a plurality of impurity regions of a first conduction type, the impurity regions forming a part of the first transistor; a heat dissipation layer; a thermal conductive layer linking the semiconductor layer and the heat dissipation layer; and an interruption structure configured to interrupt a flow of a current between the first transistor and the thermal conductive layer. |
