| 摘要 |
The present invention suppresses the generation of a void on a device isolation insulation layer. The semiconductor device includes: a substrate; a first active region which is formed on the substrate, includes a first region of a first width and a second region with a second width which is wider than the first width and is extended in a first direction; a second active region which is formed on the substrate and is extended in parallel to the second region of the first active region; and the device isolation insulation layer which is formed on the substrate and which defines each of the first active region and the second active region. The second region of the first active region or the second active region has a concave shape to be concave in a second direction across the first direction on the plane view. |
