METHOD FOR EXTRACTING EXCESS CARRIER LIFETIMES OF ORGANIC THIN-FILM TRANSISTOR USING OPTICAL RESPONSE CHARACTERISTIC, AND APPARATUS THEREOF

摘要

A method of extracting an excess carrier lifetime of an organic thin-film transistor by using optical response characteristics according to an embodiment of the present invention includes the steps of: measuring a first drain current according to a gate voltage of an organic thin-film transistor in a darkroom; measuring a second drain current according to a gate voltage by radiating light having a predetermined wavelength to the organic thin-film transistor in a darkroom; measuring a third drain current according to a gate voltage of the organic thin-film transistor every elapsed time period based on an off-time of the light after the light is off; calculating differences between threshold voltages of each elapsed time of the organic thin-film transistor based on the first to third drain currents; and extracting a plurality of excess carrier lifetimes of the organic thin-film transistor based on the calculated differences between the threshold voltages of each elapsed time.