| 摘要 |
<p>PURPOSE: A non-volatile memory device and a manufacturing method thereof are provided to prevent collapsing an inter-layer insulating film in a wet etch process by forming supporters on a contact area. CONSTITUTION: A semiconductor substrate(100) includes a memory cell area(MR) and a contact area(CR). An activity post(PL) is perpendicularly extended about the semiconductor substrate. A first gate electrode is formed on the memory cell area. A second gate electrode is formed on the contact area. A plurality of supporter(SP) passes through the gate electrodes. The supporters support an edge part of the gate electrodes and a laminated inter-layer insulating film(110).</p> |
