SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

The present invention provides a method for manufacturing a semiconductor device with a threshold value which is adjusted to an appropriate value. The semiconductor device according to the present invention includes: a semiconductor; a source electrode or a drain electrode which is electrically connected to the semiconductor; a first gate electrode and a second gate electrode which installed by interposing the semiconductor; an electron capturing layer which is installed between the first gate electrode and the semiconductor; and a gate insulation layer which is installed between the second gate electrode and the semiconductor. Icut is reduced by increasing the threshold value through capturing electrons in the electron capturing layer by keeping the potential of a first gate electrode higher than the potential of the source or drain electrode for one second or more while heating.