发明名称 COOLING PLATE, METHOD FOR MANUFACTURING THE SAME, AND MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS
摘要 <p>A dense composite material according to the present invention contains, in descending order of content, silicon carbide, titanium silicon carbide, and titanium carbide as three major constituents. The dense composite material contains 51% to 68% by mass of silicon carbide and no titanium silicide and has an open porosity of 1% or less. This dense composite material has properties such as an average linear thermal expansion coefficient of 5.4 to 6.0 ppm/K at 40° C. to 570° C., a thermal conductivity of 100 W/m·K or more, and a four-point bending strength of 300 MPa or more.</p>
申请公布号 KR101483921(B1) 申请公布日期 2015.01.16
申请号 KR20147030617 申请日期 2014.03.06
申请人 发明人
分类号 H01L21/4763;H01L21/48;H01L21/683 主分类号 H01L21/4763
代理机构 代理人
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