NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME

摘要

Disclosed are a nitride semiconductor light emitting diode and a method of manufacturing the same. The nitride semiconductor light emitting diode increases light escape angle and improves light scattering characteristic to maximize light extraction efficiency by forming a light scattering filling layer in an etch groove which penetrates at least one of a transparent conductive electrode and part of a light emitting structure. A nitride semiconductor light emitting diode according to the present invention includes: a light emitting structure which includes an n-type nitride layer stacked on a substrate, an active layer, and a p-type nitride layer; a transparent conductive electrode formed on the p-type nitride layer of the light emitting structure; a light scattering filling layer which is filled in at least one etch groove formed to penetrate a transparent conductive electrode or at least part of the light emitting structure and the transparent conductive electrode, and includes a material which has a refractive index (n) of 1.5 to 2.4; a p-type electrode pad formed on the transparent conductive electrode; and an n-electrode pad formed on an n-type nitride layer.