| 摘要 |
The device increases the repair ratio of semiconductor memory. The device includes the 1st address means which selects the word line of each block, the 2nd address means which selects the block, an n+2 redundancy decoding means which inputs the 1st and 2nd address means, an (n+2)/2n combination means which has OR gates, a spare word line selection means which makes enable unselected spare word lines, and has AND gates.
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