| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve sensitivity characteristics and high humidity fluidity resistance of an electrophotographic photoreceptor and achieving both high image resolution and suppression of an image memory.SOLUTION: In an electrophotographic photoreceptor including: a photoconductive layer; and a surface layer provided on the photoconductive layer and formed out of amorphous silicon carbide hydride, a ratio (C/(Si+C)) of an atomic number (C) of carbon atoms to the sum of an atomic number (Si) of silicon atoms and the atomic number (C) of the carbon atoms on the surface layer is set to be not less than 0.50 and not more than 0.65; the sum of an atomic density of the silicon atoms and an atomic density of the carbon atoms on the surface layer is set to be not less than 6.60×10atom/cm, and a defect density measured by electron spin resonance measurement on the surface layer is set to be not less than 9.0×10spins/cmand not more than 2.2×10spins/cm.</p> |
