Semiconductor Device Having Shielding Structure

摘要

The present invention provides a semiconductor device with a shielding structure. The semiconductor device includes a substrate, an RF circuit, a shielding structure and an interconnection system. The substrate includes an active side and a back side. The RF circuit is disposed on the active side of the substrate. The shielding structure is disposed on the active side and encompasses the RF circuit. The shielding structure is grounded. The shielding structure includes a shielding TST which does not penetrate through the substrate. The interconnection system is disposed on the active side of the substrate. The interconnection system includes a connecting unit electrically connect a signal to the RF circuit.

主权项

1. A semiconductor device with a shielding structure, comprising:
a substrate, having an active surface and a back surface; a radio frequency (RF) circuit, disposed on the active surface of the substrate; a shielding structure disposed at least in the substrate, wherein the shielding structure encompasses the RF circuit and is grounded, and the shielding structure comprises a shielding through silicon trench (TST) that does not penetrate through the substrate; and a metal interconnection system disposed on a side of the active surface, wherein the metal interconnection system comprises a connecting trace that provides a voltage signal to the RF circuit.