发明名称 |
VERTICAL III-NITRIDE SEMICONDUCTOR DEVICE WITH A VERTICALLY FORMED TWO DIMENSIONAL ELECTRON GAS |
摘要 |
A HEMT device comprising a III-Nitride material substrate, the surface of which follows a plane that is not parallel to the C-plane of the III-Nitride material; an epitaxial layer of III-Nitride material grown on said substrate; a recess etched in said epitaxial layer, having at least one plane wall parallel to a polar plane of the III-Nitride material; a carrier supply layer formed on a portion of the plane wall of the recess, such that a 2DEG region is formed along the portion of the plane wall of the recess; a doped source region formed at the surface of said epitaxial layer such that the doped source region is separated from said 2DEG region by a channel region of the epitaxial layer; a gate insulating layer formed on the channel region of the epitaxial layer; and a gate contact layer formed on the gate insulating layer. |
申请公布号 |
US2015014700(A1) |
申请公布日期 |
2015.01.15 |
申请号 |
US201414329745 |
申请日期 |
2014.07.11 |
申请人 |
HRL LABORATORIES LLC |
发明人 |
Khalil Sameh G.;Corrion Andrea;Boutros Karim S. |
分类号 |
H01L29/778;H01L29/66 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
1. A HEMT device comprising:
a III-Nitride material substrate, the surface of which follows a plane that is not parallel to the C-plane of the III-Nitride material; an epitaxial layer of III-Nitride material grown on said substrate; a recess etched in said epitaxial layer, the recess having at least one plane wall that is not parallel to the surface of the substrate; said at least one plane wall being parallel to a polar plane of the III-Nitride material; at least one carrier supply layer formed on at least a portion of said at least one plane wall of the recess, such that a 2DEG region is formed along said at least a portion of said at least one plane wall of the recess; a doped source region formed at the surface of said epitaxial layer such that the doped source region is separated from said 2DEG region by a channel region of the epitaxial layer; a gate insulating layer formed on the channel region of the epitaxial layer; and a gate contact layer formed on the gate insulating layer. |
地址 |
Malibu CA US |