| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having excellent reverse breakdown voltage characteristics, and capable of achieving a bidirectional switch body using only one element and applying high gate voltage.SOLUTION: A semiconductor device comprises: a semiconductor layer laminate 13 formed on a substrate 11, including a channel region, and composed of a semiconductor composed of a nitride semiconductor; a first electrode 16A and a second electrode 16B formed apart from each other on the semiconductor layer laminate 13; and a first gate electrode 18A formed between the first electrode 16A and the second electrode 16B and a second gate electrode 18B formed between the first gate electrode 18A and the second electrode 16B. The second electrode 16B and the second gate electrode 18B are an electrically short-circuited three-terminal element. |
