| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon single crystal wafer capable of manufacturing wafers with different specifications such as a wafer for an insulation gate bipolar transistor (IGBT) and a wafer for a general device using a wafer that is manufactured under the same single crystal ingot pulling-up condition and the same heat treatment (RTA treatment) condition due to quick heating and quick cooling, and a manufacturing method thereof.SOLUTION: A manufacturing method of a silicon single crystal wafer includes a pulling-up step, a hole injection step, and a hole control and heat treatment step. With a heat treatment condition in the hole control and heat treatment step, an oxygen precipitate density distribution pattern after the hole control and heat treatment is controlled. In a distribution p1 having a peak only at a center portion in a thickness direction of a wafer is suitable for the wafer for IGBT, because thickness of a DZ layer formed at a wafer surface layer part is thick. Distributions of patterns p2, p3, p4 are suitable for a general device, because thickness of the DZ layer formed at the wafer surface layer part is thinner than that of the distribution p1. |
