SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device of a novel structure, which can hold memory contents even in a state where power is not supplied and has no limits in the number of rewritable times.SOLUTION: A semiconductor device comprises: source lines SL; bit lines BL; first signal lines S1; second signal lines S2; word lines WL; memory cells 1100 connected between the source line SL and the bit line BL in parallel with each other; a first drive circuit 1111 electrically connected with the source line SL and the bit line BL; a second drive circuit 1112 electrically connected with the first signal line S1; a third drive circuit 1113 electrically connected with the second signal line S2; and a fourth drive circuit 1114 electrically connected with the word lines WL. Each memory cell 1100 includes a first transistor, a second transistor OS and a capacitative element. The second transistor OS is formed to contain an oxide semiconductor material.