| 发明名称 |
Semiconductor Device Manufacturing Method and Substrate Treatment System |
| 摘要 |
A semiconductor device manufacturing method that includes: forming a gate insulating film containing a hafnium oxide and a zirconium oxide on a workpiece having a source, a drain and a channel; and subjecting the gate insulating film to a crystallization heat treatment at a temperature of 600 degrees C. or less is provided. The gate insulating film subjected to the crystallization heat treatment has a relative permittivity of 27 or more. |
| 申请公布号 |
US2015017813(A1) |
申请公布日期 |
2015.01.15 |
| 申请号 |
US201414504915 |
申请日期 |
2014.10.02 |
| 申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
AKIYAMA Koji;HIGASHIJIMA Hirokazu;TAMURA Chihiro;AOYAMA Shintaro;WAMURA Yu |
| 分类号 |
H01L21/02;C23C16/56;C23C16/46;C23C16/06;H01L21/28;C23C16/52 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device manufacturing method, comprising:
forming a gate insulating film containing a hafnium oxide and a zirconium oxide on a workpiece having a source, a drain and a channel; and subjecting the gate insulating film to a crystallization heat treatment at a temperature of 600 degrees C. or less, wherein the gate insulating film subjected to the crystallization heat treatment has a relative permittivity of 27 or more. |
| 地址 |
Tokyo JP |
