METHOD OF FABRICATING MOS DEVICE

摘要

Provided is a method of fabricating a MOS device including the following steps. A gate structure is formed on a substrate and a first spacer is formed at a sidewall of the gate structure. A first implant process is performed to form source and drain extension regions in the substrate. A spacer material layer is formed on the gate structure, the first spacer and the substrate. A treatment process is performed so that stress form the spacer material layer is applied onto and memorized in a channel between two source and drain extension regions. An anisotropic process is performed to remove a portion of the spacer material so that a second spacer is formed. A second implant process is performed to form source and drain regions in the substrate.

主权项

1. A method of fabricating a MOS device, comprising:
forming a gate structure on a substrate; forming a first spacer at a sidewall of the gate structure; performing a first implant process to form source and drain extension regions in the substrate, wherein a channel is defined by two adjacent source and drain extension regions; forming a spacer material layer to cover the gate structure, the first spacer and the substrate; performing an anisotropic process to remove a portion of the spacer material so that a second spacer is formed at a sidewall of the first spacer; after the step of forming the spacer material layer and before the step of performing the anisotropic process, performing a treatment process so that stress from the spacer material layer is applied onto and memorized in the channel; and performing a second implant process to form source and drain regions in the substrate.