| 发明名称 |
METHODS OF FORMING A SEMICONDUCTOR DEVICE |
| 摘要 |
A method of forming a semiconductor device includes forming a first transistor and a second transistor on a substrate, monitoring processes of forming the first and second transistors to find an error and performing an additional ion implantation process to form a low-concentration dopant region or a halo region on the first transistor or the second transistor corresponding to a found error. |
| 申请公布号 |
US2015017746(A1) |
申请公布日期 |
2015.01.15 |
| 申请号 |
US201313940545 |
申请日期 |
2013.07.12 |
| 申请人 |
INFINEON TECHNOLOGIES AG ;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
Yu Cheong Sik;Bae Choelhwyi;Park JaeHoo;Stahrenberg Knut |
| 分类号 |
H01L21/66 |
主分类号 |
H01L21/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a semiconductor device, comprising:
forming a first transistor and a second transistor on a substrate; monitoring processes of forming the first and second transistors to find an error; and performing an additional ion implantation process to form a low-concentration dopant region or a halo region on the first transistor or the second transistor corresponding to a found error. |
| 地址 |
Bavaria DE |
