发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To suppress the occurrence of BTI deterioration in a plurality of transistors within an internal circuit.SOLUTION: A semiconductor device 10 includes a command decoding circuit 24 and a timing control circuit 41. The command decoding circuit 24 activates a read command MREAD and a refresh command IREF0. The timing control circuit 41 includes: an internal circuit that includes a plurality of transistors and is configured so that in response to the fact that the command decoding circuit 24 activates at least one of the read command MREAD and refresh command IREF0, the plurality of transistors are set in a first operation state; and an output gate circuit that receives a signal, which is output from the internal circuit, and is configured so as to output the signal in response to the fact that the command decoding circuit 24 does not activate the refresh command IREF0 and so as not to output the signal in response to the fact that the circuit activates the refresh command IREF0.
申请公布号 JP2015008029(A) 申请公布日期 2015.01.15
申请号 JP20130133557 申请日期 2013.06.26
申请人 MICRON TECHNOLOGY INC 发明人 FUJISHIRO KEISUKE
分类号 G11C11/4076;G11C11/407;H01L21/8242;H01L27/108 主分类号 G11C11/4076
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