发明名称 |
OPTICAL DEVICE, OPTICAL ELEMENT, AND IMAGE DISPLAY DEVICE |
摘要 |
Disclosed are an optical device, an optical element, and an image display device that can achieve an improved absorption efficiency of excitation light. The optical device includes: a light-emitting element; a carrier generation layer on which light from the light-emitting element is incident and in which carriers are generated; a plasmon excitation layer that excites a plasmon, stacked on the upper side of the carrier generation layer and has a plasma frequency higher than a frequency of light generated when the carrier generation layer is excited by the light from the light-emitting element; and an exit layer that converts light or a surface plasmon generated on a surface of the plasmon excitation layer into light having a predetermined exit angle and from which the light having the predetermined exit angle exits. The optical device further includes a polarization conversion layer on the lower side of the carrier generation layer. |
申请公布号 |
US2015016085(A1) |
申请公布日期 |
2015.01.15 |
申请号 |
US201214370886 |
申请日期 |
2012.10.03 |
申请人 |
NEC Corporation |
发明人 |
Natsumeda Masanao;Imai Masao;Tominaga Shin;Suzuki Naofumi;Tomiyama Mizuho;Ohno Yuji |
分类号 |
G02B5/00;F21V9/14 |
主分类号 |
G02B5/00 |
代理机构 |
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代理人 |
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主权项 |
1. An optical device comprising:
a light-emitting element; a carrier generation layer on which light from the light-emitting element is incident and in which carriers are generated; a plasmon excitation layer that excites a plasmon, the plasmon excitation layer being stacked on an upper side of the carrier generation layer and having a plasma frequency higher than a frequency of light generated when the carrier generation layer is excited by the light from the light-emitting element; and an exit layer that converts light or a surface plasmon generated on a surface of the plasmon excitation layer into light having a predetermined exit angle and from which the light having the predetermined exit angle exits, wherein the optical device further comprises a polarization conversion layer on a lower side of the carrier generation layer. |
地址 |
Tokyo JP |