发明名称 OPTICAL DEVICE, OPTICAL ELEMENT, AND IMAGE DISPLAY DEVICE
摘要 Disclosed are an optical device, an optical element, and an image display device that can achieve an improved absorption efficiency of excitation light. The optical device includes: a light-emitting element; a carrier generation layer on which light from the light-emitting element is incident and in which carriers are generated; a plasmon excitation layer that excites a plasmon, stacked on the upper side of the carrier generation layer and has a plasma frequency higher than a frequency of light generated when the carrier generation layer is excited by the light from the light-emitting element; and an exit layer that converts light or a surface plasmon generated on a surface of the plasmon excitation layer into light having a predetermined exit angle and from which the light having the predetermined exit angle exits. The optical device further includes a polarization conversion layer on the lower side of the carrier generation layer.
申请公布号 US2015016085(A1) 申请公布日期 2015.01.15
申请号 US201214370886 申请日期 2012.10.03
申请人 NEC Corporation 发明人 Natsumeda Masanao;Imai Masao;Tominaga Shin;Suzuki Naofumi;Tomiyama Mizuho;Ohno Yuji
分类号 G02B5/00;F21V9/14 主分类号 G02B5/00
代理机构 代理人
主权项 1. An optical device comprising: a light-emitting element; a carrier generation layer on which light from the light-emitting element is incident and in which carriers are generated; a plasmon excitation layer that excites a plasmon, the plasmon excitation layer being stacked on an upper side of the carrier generation layer and having a plasma frequency higher than a frequency of light generated when the carrier generation layer is excited by the light from the light-emitting element; and an exit layer that converts light or a surface plasmon generated on a surface of the plasmon excitation layer into light having a predetermined exit angle and from which the light having the predetermined exit angle exits, wherein the optical device further comprises a polarization conversion layer on a lower side of the carrier generation layer.
地址 Tokyo JP