发明名称 A MONOLITHIC THREE DIMENSIONAL (3D) RANDOM ACCESS MEMORY (RAM) ARRAY ARCHITECTURE WITH BITCELL AND LOGIC PARTITIONING
摘要 <p>A monolithic three dimensional (3D) memory cell array architecture with bitcell and logic partitioning is disclosed. A 3D integrated circuit (IC) (3DIC) is proposed which folds or otherwise stacks elements of the memory cells into different tiers within the 3DIC. Each tier of the 3DIC has memory cells as well as access logic including global block control logic therein. By positioning the access logic and global block control logic in each tier with the memory cells, the length of the bit and word lines for each memory call are shortened, allowing for reduced supply voltages as well as generally reducing the overall footprint of the memory device.</p>
申请公布号 WO2015006563(A1) 申请公布日期 2015.01.15
申请号 WO2014US46152 申请日期 2014.07.10
申请人 QUALCOMM INCORPORATED 发明人 KAMAL, PRATYUSH;DU, YANG
分类号 G11C8/12;G11C5/02;H01L27/06 主分类号 G11C8/12
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