发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To use an electrode that is more inexpensive than Au.SOLUTION: A semiconductor device comprises: a first titanium layer formed of titanium, which is formed so as to cover at least a part of a semiconductor layer; an aluminum layer containing aluminum as a primary component, which is formed on the opposite side to the semiconductor layer with respect to the first titanium layer; a titanium nitride layer formed of titanium nitride, which is formed on the opposite side to the first titanium layer with respect to the aluminum layer; and an electrode layer formed of copper, which is formed on the opposite side to the aluminum layer with respect to the titanium nitride layer.
申请公布号 JP2015008264(A) 申请公布日期 2015.01.15
申请号 JP20130224210 申请日期 2013.10.29
申请人 TOYODA GOSEI CO LTD 发明人 MURAKAMI TOMOAKI;OKA TORU
分类号 H01L21/28;H01L29/417;H01L29/47;H01L29/872 主分类号 H01L21/28
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