| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that can suppress generation of a leakage current caused by movable ions in a mold resin, and that has an excellent reliability.SOLUTION: A semiconductor device 1 is formed to have: an SOI substrate 10; a field insulating film 5 formed on the SOI substrate 10 so as to sectionalize a plurality of element formation regions 6, 7, 8, and 9; first and second HV-pMOSs 17 and 18 and first and second LV-pMOSs 27 and 28 formed in the plurality of element formation regions 6, 7, 8, and 9; a first interlayer insulating film 40 and a second interlayer insulating film 42 formed on the SOI substrate 10; a mold resin 44 formed on the second interlayer insulating film 42; and conductor films 45 and 46 formed on the first interlayer insulating film 40, and interposed between the plurality of element formation regions 6, 7, 8, and 9 and the field insulating film 5, and the mold resin 44. |
