PATTERNING FINS AND PLANAR AREAS IN SILICON

摘要

A method including for forming a plurality of mandrels, a plurality of sidewall spacers, and a plurality of offset spacers above a hardmask layer, the sidewall spacers being separated by the plurality of mandrels and the plurality of offset spacers in an alternating order, each of the plurality of sidewall spacers being in direct contact with a single offset spacer and a single mandrel, the plurality of mandrels being separated from the plurality of offset spacers by the plurality of sidewall spacers, depositing a fill material above the plurality of mandrels, above the plurality of sidewall spacers, above the plurality of offset spacers, and above the hardmask layer, and removing the plurality of mandrels and the plurality of offset spacers selective to the plurality of sidewall spacers, the fill material, and the hardmask layer.

主权项

1. A method comprising:
forming a plurality of mandrels, a plurality of sidewall spacers, and a plurality of offset spacers above a hardmask layer, the sidewall spacers being separated by the plurality of mandrels and the plurality of offset spacers in an alternating order, each of the plurality of sidewall spacers being in direct contact with a single offset spacer and a single mandrel, the plurality of mandrels being separated from the plurality of offset spacers by the plurality of sidewall spacers; depositing a fill material above the plurality of mandrels, above the plurality of sidewall spacers, above the plurality of offset spacers, and above the hardmask layer; and removing the plurality of mandrels and the plurality of offset spacers selective to the plurality of sidewall spacers, the fill material, and the hardmask layer.