| 摘要 |
A process for semiconductor device production which comprises: a preparation step in which a substrate for element mounting (108) equipped with a plurality of package areas (114) separated by dicing regions (112) is prepared; a mounting step in which semiconductor chips (116) are mounted respectively on the package areas (114) of the substrate for element mounting (108); a molding step in which the semiconductor chips (116) are simultaneously encapsulated by molding with an encapsulating epoxy resin composition; and a chip formation step in which the resultant structure is diced along the dicing regions (112) to separate the individual encapsulated semiconductor chips (116). The encapsulating epoxy resin composition comprises (A) an epoxy resin, (B) a hardener, (C) a silicone resin, (D) an inorganic filler, and (E) a hardening accelerator, wherein the silicone resin (C) is a branched silicone resin that is a methylphenyl-type thermoplastic silicone resin and has repeating structural units represented by general formulae (a), (b), (c), and (d). (In the formulae, symbol * indicates a bond with the Si atom contained in a repeating structural unit of another or the same kind; and R1a, R1b, R1c, and R1d are each a methyl or phenyl group and may be the same as or different from one another. The content of Si-bonded phenyl groups is 50 mass% or higher of the molecule, and the content of Si-bonded OH groups is less than 0.5 mass% of the molecule.) |
