发明名称 SUBSTRATE INCULDING OXIDE THIN-FILM TRANSISTOR AND METHOD FOR FABBICATING THE SAME, DIRVING CIRCUIT FOR LIQUID CRYSTAL DISPLAY DEVICE USING THEREOF
摘要 <p>There are provided a substrate including an oxide TFT having improved initial threshold voltage degradation characteristics included in a driving circuit of a liquid crystal display (LCD) device, a method for fabricating the same, and a driving circuit for an LCD device using the same. The substrate including an oxide thin film transistor (TFT) includes: a base substrate divided into a pixel region and a driving circuit region; and a plurality of TFTs formed on the base substrate, wherein an initial threshold voltage of at least one of the plurality of TFTs formed in the driving circuit region is positive-shifted to have a predetermined level.</p>
申请公布号 KR101483026(B1) 申请公布日期 2015.01.15
申请号 KR20120096532 申请日期 2012.08.31
申请人 发明人
分类号 G02F1/133;G02F1/1368;H01L29/786 主分类号 G02F1/133
代理机构 代理人
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