| 摘要 |
<p>The purpose of the present invention is to solve problems such as the decrease in size of grains, the increase of crystal failure; coagulated silicon attached to a susceptor; and a crack generated on the silicon caused by a polysilicon film directly attached to the susceptor in an existing technology. Therefore, provided is a structure in which bars with a constant width W are arranged at constant interval S in a moving direction in the susceptor of a plate shape touching the polysilicon film. Provided is also a protruding structure having a width W1 at a gap S1 in a vertical direction to the moving direction. The upper part of the susceptor is changed so that the thickness of a part in which the polysilicon film and the susceptor are in contact with each other is reduced. The present invention provides an operation method for a recrystallization device in order for all parts of the susceptor to be in contact with a liquid silicon in a silicon wafer recrystallization device having the shape of the susceptor so that the problems in the existing method can be solved.</p> |
