发明名称 |
FILM-FORMING COMPOSITION AND ION IMPLANTATION METHOD |
摘要 |
There is provided an ion implantation method, a composition for forming an ion implantation film and a resist underlayer film-forming composition. An ion implantation method including the steps of: forming a film by applying a film-forming composition containing a compound including an element in group 13, group 14, group 15, or group 16 and an organic solvent onto a substrate and baking the film-forming composition; and implanting impurity ions into the substrate from above through the film and introducing the element in group 13, group 14, group 15, or group 16 in the film into the substrate. The film-forming composition is a film-forming composition for ion implantation containing a compound including an element in group 13, group 14, group 15, or group 16, and an organic solvent. In addition, the underlayer film-forming composition contains a compound having at least two borate ester groups. |
申请公布号 |
US2015017791(A1) |
申请公布日期 |
2015.01.15 |
申请号 |
US201314374992 |
申请日期 |
2013.02.08 |
申请人 |
NISSAN CHEMICAL INDUSTRIES, LTD. |
发明人 |
Ohashi Tomoya;Kishioka Takahiro |
分类号 |
H01L21/266;G03F7/40;C07F5/04 |
主分类号 |
H01L21/266 |
代理机构 |
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代理人 |
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主权项 |
1. An ion implantation method comprising the steps of:
forming a film by applying a film-forming composition containing a compound including an element in group 13, group 14, group 15, or group 16 and an organic solvent onto a substrate and baking the film-forming composition; and implanting impurity ions into the substrate from above through the film and introducing the element in group 13, group 14, group 15, or group 16 in the film into the substrate. |
地址 |
Tokyo JP |