发明名称 Array Substrate, Manufacturing Method Thereof, And Display Device
摘要 Embodiments of the present invention provide an array substrate, a manufacturing method thereof, and a display device. The array substrate comprises: a pixel region, a data-line pad region and a gate-line pad region; the pixel region comprises: a pixel electrode, a gate electrode of a TFT, source and drain electrodes of the TFT, a connection electrode, and a common electrode; the data-line pad region comprises: an insulating layer, a semiconductor layer, a data line, and a data-line connection pad; the data line and the source and drain electrodes are of a same layer and a same material; and the gate-line pad region comprises: a gate line, an insulating layer, and a gate-line connection pad; the gate line and the gate electrode are of a same layer and a same material; and the gate-line connection pad and the source and drain electrodes are of a same layer and a same material. The array substrate can reduce the number of masks and exposure times, thereby reducing manufacturing costs and improving production efficiency.
申请公布号 US2015014692(A1) 申请公布日期 2015.01.15
申请号 US201213995926 申请日期 2012.11.06
申请人 BOE Technology Group Co., Ltd. ;Hefei Xinsheng Optoelectronics Technology Co., Ltd 发明人 Wu Song
分类号 H01L27/12;G02F1/1368;G02F1/1362 主分类号 H01L27/12
代理机构 代理人
主权项 1. An array substrate, comprising: a pixel region, a data-line pad region and a gate-line pad region; wherein the pixel region comprises: a pixel electrode, a gate electrode of a thin-film transistor (TFT), source and drain electrodes of the TFT, a connection electrode electrically connecting the pixel electrode with the drain electrode of the TFT, and a common electrode; the pixel electrode is provided on an upper surface of the substrate; the gate electrode of the TFT and the connection electrode are of a same layer and a same material; a semiconductor layer is formed between the source, drain electrodes and the gate electrode; an insulating layer is formed between the semiconductor layer and the gate electrode; the pixel electrode is electrically connected with the drain electrode of the TFT via the connection electrode; the common electrode comprises a portion that is of a same layer and a same material as the source, drain electrodes, moreover, the semiconductor layer and the insulating layer are sequentially formed between said portion that is of a same layer and a same material as the source, drain electrodes and the pixel electrode; the data-line pad region comprises a data line and a data-line connection pad, the data line and the source and drain electrodes are of a same layer and a same material; and the gate-line pad region comprises a gate line and a gate-line connection pad; the gate line and the gate electrode are of a same layer and a same material; and the gate-line connection pad and the source and drain electrodes are of a same layer and a same material.
地址 Beijing CN
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