SEMICONDUCTOR DEVICE AND DISPLAY DEVICE INCLUDING THE SEMICONDUCTOR DEVICE

摘要

A semiconductor device including a transistor and a connection portion is provided. The transistor includes a gate electrode, a first insulating film over the gate electrode, an oxide semiconductor film over the first insulating film and at a position overlapping with the gate electrode, and source and drain electrodes electrically connected to the oxide semiconductor film; and the connection portion includes a first wiring on the same surface as a surface on which the gate electrode is formed, a second wiring on the same surface as a surface on which the source and drain electrodes are formed, and a third wiring connecting the first wiring and the second wiring. The distance between an upper end portion and a lower end portion of the second wiring is longer than the distance between an upper end portion and a lower end portion of each of the source and drain electrodes.

主权项

1. A semiconductor device comprising:
a first wiring; a second wiring; a third wiring electrically connecting the first wiring and the second wiring; and a transistor comprising:
a semiconductor film including a channel formation region; anda source electrode and a drain electrode electrically connected to the semiconductor film, wherein the second wiring, the source electrode and the drain electrode are provided on a same surface, wherein each end portion of the second wiring, the source electrode and the drain electrode comprises an upper end portion and a lower end portion, and wherein a distance between the upper end portion and the lower end portion of the second wiring is longer than a distance between the upper end portion and the lower end portion of each of the source electrode and the drain electrode.