| 发明名称 |
TUNNELING DEVICES AND METHODS OF MANUFACTURING THE SAME |
| 摘要 |
A tunneling device may include a tunnel barrier layer, a first material layer including a first conductivity type two-dimensional material on a first surface of the tunnel barrier layer and a second material layer including a second conductivity type two-dimensional material on a second surface of the tunnel barrier layer. The tunneling device may use a tunneling current through the tunnel barrier layer between the first material layer and the second material layer. |
| 申请公布号 |
US2015014630(A1) |
申请公布日期 |
2015.01.15 |
| 申请号 |
US201414188862 |
申请日期 |
2014.02.25 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
CHOI Jun-hee;YOO Won-jong;LEE Seung-hwan;CHOI Min-sup;LIU Xiao Chi;LEE Ji-a |
| 分类号 |
H01L29/775;H01L29/16;H01L29/66 |
主分类号 |
H01L29/775 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A tunneling device comprising:
a tunnel barrier layer; a first material layer on a first surface of the tunnel barrier layer, the first material layer including a P-type two-dimensional (2D) material; and a second material layer on a second surface of the tunnel barrier layer, the second material layer including an N-type 2D material, wherein the tunneling device uses a tunneling current through the tunnel barrier layer between the first material layer and the second material layer. |
| 地址 |
Suwon-Si KR |
