发明名称 METAL OXIDE FILM STRUCTURE
摘要 <p>The present invention relates to a metal oxide film structure formed on a surface of a base material, and more specifically, to a metal oxide film structure in which the number of atoms of a metal element and the number of atoms of an oxygen element constituting the metal oxide film exhibit non-stoichiometric characteristics so as to be dense and formed so that the density of the metal oxide is 90-100% of the density of the metal oxide before coating, and so as to not have cracks or air bubbles. The present invention provides the metal oxide film structure, wherein the metal oxide film structure is formed on the surface of the base material, and wherein when a metal oxide represented by XaYb (X: metal element, Y: oxygen element, a: number of atoms of metal element, b: number of atoms of oxygen element) is formed into a film structure, the atomic percent of the metal element in the metal oxide film structure is bigger than {a/(a+b)}×100(%), wherein the film structure comprises nanocrystalline particles and nano-non-crystalline particles, and wherein the particles constituting the film structure do not grow due to heat or become crystalline due to heat, and is absent of cracks and air bubbles.</p>
申请公布号 WO2015005735(A1) 申请公布日期 2015.01.15
申请号 WO2014KR06276 申请日期 2014.07.11
申请人 FEMVIX CORP.;KIM, OK RYUL;KIM, OK MIN 发明人 KIM, OK RYUL;KIM, OK MIN
分类号 C23C30/00;C01G1/02 主分类号 C23C30/00
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