METHOD AND APPARATUS FOR PRODUCING ALUMINUM NITRIDE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To obtain a good-quality aluminum nitride crystal stably in a liquid phase growth method for epitaxially growing an AlN crystal on a seed substrate by using a Ga-Al alloy melt. ! SOLUTION: A holding plate 4 is immersed in a Ga-Al alloy melt 5 so that a seed substrate 3 is arranged on a supply port 1b side for supplying gas containing N atoms, and an aluminum nitride crystal is epitaxially grown on the seed substrate 3 in the Ga-Al alloy melt 5. ! COPYRIGHT: (C)2015,JPO&INPIT