ISOLATION STRUCTURE IN GALLIUM NITRIDE DEVICES AND INTEGRATED CIRCUITS

摘要

An integrated semiconductor device includes a substrate layer, a buffer layer formed on the substrate layer, a gallium nitride layer formed on the buffer layer, and a barrier layer formed on the gallium nitride layer. Furthermore, ohmic contacts for a plurality of transistor devices are formed on the barrier layer. Specifically, a plurality of first ohmic contacts for the first transistor device are formed on a first portion of the surface of the barrier layer, and a plurality of second ohmic contacts for the second transistor device are formed on a second portion of the surface of the barrier layer.