IN-SITU DEPOSITION OF FILM STACKS

摘要

An apparatus for depositing film stacks in-situ (i.e., without a vacuum break or air exposure) are described. In one example, a plasma-enhanced chemical vapor deposition apparatus configured to deposit a plurality of film layers on a substrate without exposing the substrate to a vacuum break between film deposition phases, is provided. The apparatus includes a process chamber, a plasma source and a controller configured to control the plasma source to generate reactant radicals using a particular reactant gas mixture during the particular deposition phase, and sustain the plasma during a transition from the particular reactant gas mixture supplied during the particular deposition phase to a different reactant gas mixture supplied during a different deposition phase.

主权项

1. A plasma-enhanced chemical vapor deposition apparatus configured to deposit a plurality of film layers on a substrate without exposing the substrate to a vacuum break between film deposition phases, the apparatus comprising:
a process station; a reactant feed fluidly coupled to the process station, the reactant feed configured to supply a particular reactant gas mixture to the process station during a particular film deposition phase; a plasma source configured to supply a plasma to the process station; and a controller configured to control the plasma source to:
generate reactant radicals using the particular reactant gas mixture during the particular deposition phase, andsustain the plasma during a transition from the particular reactant gas mixture supplied during the particular deposition phase to a different reactant gas mixture supplied during a different deposition phase, wherein the different deposition phase deposits a material having a different composition from the material deposited in the particular film deposition phase.