发明名称 POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE AND PATTERN FORMING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a positive resist composition for immersion exposure, capable of further improving a receding contact angle with an immersion liquid in immersion exposure and reducing watermark defects, and to provide a pattern forming method using the composition.SOLUTION: The positive resist composition for immersion exposure comprises: (A) a resin that is decomposed by an action of an acid to increase a solubility in an alkali developing solution; (B) a compound that generates an acid by irradiation with actinic rays or radiation; (C) a resin having at least either one of a fluorine atom and a silicon atom; and (D) a mixture solvent containing at least one solvent selected from the group of solvents expressed by general formulae (S1) to (S3), by 3 to 20 mass% in all solvents.
申请公布号 JP2015007781(A) 申请公布日期 2015.01.15
申请号 JP20140146720 申请日期 2014.07.17
申请人 FUJIFILM CORP 发明人 YAMAMOTO KEI;SAEGUSA HIROSHI
分类号 G03F7/039;C08F12/20;C08F20/10;C08F30/08;C08F32/04;G03F7/004;H01L21/027 主分类号 G03F7/039
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