发明名称 |
PIEZOELECTRIC/ELECTROSTRICTIVE FILM TYPE ELEMENT AND METHOD FOR PRODUCING PIEZOELECTRIC/ELECTROSTRICTIVE FILM TYPE ELEMENT |
摘要 |
Provided is a piezoelectric/electrostrictive film type element in which the film thickness of the piezoelectric/electrostrictive film is small, the piezoelectric/electrostrictive film is dense, and the piezoelectric/electrostrictive film has good durability and insulation quality. The piezoelectric/electrostrictive film type element includes a substrate, a lower electrode film, a piezoelectric/electrostrictive film and an upper electrode film. The substrate and the lower electrode film are fixed adherently each other. The film thickness of the piezoelectric/electrostrictive film is 5 μm or less. The piezoelectric/electrostrictive film is composed of a piezoelectric/electrostrictive ceramic. The piezoelectric/electrostrictive ceramic contains lead zirconate titanate and a bismuth compound. The bismuth/lead ratio in the peripheral section inside the grain which is relatively close to the grain boundary is greater than the bismuth/lead ratio in the center section inside the grain which is relatively far from the grain boundary. |
申请公布号 |
US2015015122(A1) |
申请公布日期 |
2015.01.15 |
申请号 |
US201414499598 |
申请日期 |
2014.09.29 |
申请人 |
NGK Insulators, Ltd. |
发明人 |
KOIZUMI Takaaki;HIBINO Tomohiko;EBIGASE Takashi |
分类号 |
H01L41/187;H01L41/047 |
主分类号 |
H01L41/187 |
代理机构 |
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代理人 |
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主权项 |
1. A piezoelectric/electrostrictive film type element comprising:
a base having a region to be covered; a first electrode film fixed adherently on said base and covering said region to be covered; a piezoelectric/electrostrictive film having a first main surface and a second main surface, wherein said first electrode film is formed on said first main surface, the piezoelectric/electrostrictive film is fixed adherently on said first electrode film, has a film thickness of 5 μm or less, and is composed of a piezoelectric/electrostrictive ceramic, said piezoelectric/electrostrictive ceramic contains lead zirconate titanate and a bismuth compound, and a bismuth/lead ratio in a peripheral section inside a grain which is relatively close to a grain boundary is greater than a bismuth/lead ratio in a center section inside the grain which is relatively far from the grain boundary; and a second electrode film formed on said second main surface. |
地址 |
Nagoya-Shi JP |