SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SAME, CRYSTAL, AND MANUFACTURING METHOD FOR SAME

摘要

Provided is a semiconductor device, or a crystal, with which phase transition occurring in corundum structure oxide crystal when at high temperature can be minimized. According to the present invention, there is provided a semiconductor device or crystal structure, having a corundum structure oxide crystal containing either indium atoms, gallium atoms, or both, the oxide crystal containing, at a minimum, aluminum atoms in the interstices between the lattice points of the crystal lattice.