| 摘要 |
A semiconductor device having a second conductivity-type back gate electrode which is formed in the interior of a body area and electrically connected to the body area, wherein bidirectional control of current from a drain area to a source area and from the source area to the drain area is performed, the sheet resistance value of the back gate electrode is lower than the sheet resistance value of the body area, and the source area and the drain area are spaced apart from each other at a distance at which a breakdown phenomenon will not occur between the source area and the back gate electrode even if the maximum operating voltage is applied between the source area and the drain area. |
