Ga2O3 SEMICONDUCTOR SUBSTRATE STRUCTURE

摘要

PROBLEM TO BE SOLVED: To provide a GaOsemiconductor substrate structure which uses a GaOcompound as a semiconductor and has an electrode capable of securing ohmic characteristics suitable for the GaOcompound.SOLUTION: A light emitting element 1 including a GaOsemiconductor substrate structure comprises: an n-typeβ-AlGaOclad layer 4 composed of aβ-AlGaO3 compound semiconductor and exhibiting n-type conductivity, an active layer 5 composed ofβ-GaOand a p-typeβ-AlGaOclad layer 6 exhibiting p-type conductivity, which are laminated on an n-typeβ-GaOsubstrate 2; and an n-side electrode 20 including a Ti film ohmic-connected to the n-typeβ-GaOsubstrate 2.