EPITAXIAL WAFER, METHOD OF MANUFACTURING THE SAME, LIGHT RECEIVING ELEMENT, AND OPTICAL SENSOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide an epitaxial wafer including a multiple quantum well capable of obtaining high crystallinity in the actual production and also to provide a method of manufacturing the same or the like.SOLUTION: On a substrate, a step is provided in which an epitaxial laminate including a multiple quantum well and a surface layer are grown by metal organic chemical vapor deposition method. In a step for growing the epitaxial laminate on the substrate, a lattice mismatch degree &Dgr;ω to the substrate of the multiple quantum well is deviated from zero regarding the center of a range, and the half width of an X-ray locking curve (FWHM) in a zero-order diffraction peak derived from the multiple quantum well is made to be 30 second or less.