发明名称 SEMICONDUCTOR WAFER PROCESSING PROCESS
摘要 PROBLEM TO BE SOLVED: To perform highly-flattening processing of a surface of a semiconductor wafer.SOLUTION: A resin adhering and grinding step is performed repeatedly. The resin adhering and grinding step includes surface-grinding one surface of a wafer obtained by slicing a semiconductor single crystal ingot by using a wire-saw device, by using as a reference surface a flat surface obtained by applying a curable material on the whole surface of the other surface of the wafer, and surface-grinding the other surface of the wafer by using the one surface of the surface-ground wafer as a reference surface.
申请公布号 JP2015008247(A) 申请公布日期 2015.01.15
申请号 JP20130133386 申请日期 2013.06.26
申请人 SUMCO CORP 发明人 TANAKA TOSHIYUKI;HASHIMOTO YASUYUKI;HASHII TOMOHIRO
分类号 H01L21/304;B24B7/04;B24B27/06 主分类号 H01L21/304
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