发明名称 |
SEMICONDUCTOR WAFER PROCESSING PROCESS |
摘要 |
PROBLEM TO BE SOLVED: To perform highly-flattening processing of a surface of a semiconductor wafer.SOLUTION: A resin adhering and grinding step is performed repeatedly. The resin adhering and grinding step includes surface-grinding one surface of a wafer obtained by slicing a semiconductor single crystal ingot by using a wire-saw device, by using as a reference surface a flat surface obtained by applying a curable material on the whole surface of the other surface of the wafer, and surface-grinding the other surface of the wafer by using the one surface of the surface-ground wafer as a reference surface. |
申请公布号 |
JP2015008247(A) |
申请公布日期 |
2015.01.15 |
申请号 |
JP20130133386 |
申请日期 |
2013.06.26 |
申请人 |
SUMCO CORP |
发明人 |
TANAKA TOSHIYUKI;HASHIMOTO YASUYUKI;HASHII TOMOHIRO |
分类号 |
H01L21/304;B24B7/04;B24B27/06 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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